BMS4003 no. a1923-1/5 features ? on-resistance r ds (on)=50m (typ.) ? input capacitance ciss=680pf (typ.) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 100 v gate-to-source voltage v gss 30 v drain current (dc) i d 18 a drain current (pulse) i dp pw 10 s, duty cycle 1% 72 a allowable power dissipation p d 2.0 w tc=25 c25w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 53 mj avalanche current *2 i av 15 a note : * 1 v dd =60v, l=200 h, i av =15a (fig.1) * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7525-002 21611qa tkim tc-00002572 sanyo semiconductors data sheet BMS4003 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena1923 product & package information ? package : to-220ml(ls) ? jeita, jedec : sc-67, sot-186a ? minimum packing quantity : 100 pcs./bag or 50pcs./magazine marking electrical connection 1 3 2 1 : gate 2 : drain 3 : source sanyo : to-220ml(ls) 0.75 0.7 123 10.0 3.5 7.2 16.0 14.0 3.6 1.2 1.6 2.55 2.55 4.5 2.8 2.4 3.2 ms4003 lot no.
BMS4003 no. a1923-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 100 v zero-gate voltage drain current i dss v ds = 100 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 35v forward transfer admittance | yfs | v ds =10v, i d = 9 a 7.8 s static drain-to-source on-state resistance r ds (on) i d = 9 a, v gs =10v 50 65 m input capacitance ciss v ds =20v, f=1mhz 680 pf output capacitance coss 130 pf reverse transfer capacitance crss 33 pf turn-on delay time t d (on) see fig.2 16 ns rise time t r 33 ns turn-off delay time t d (off) 27 ns fall time t f 15 ns total gate charge qg v ds =60v, v gs =10v, i d =18a 11.4 nc gate-to-source charge qgs 4.1 nc gate-to-drain ?miller? charge qgd 3.8 nc diode forward voltage v sd i s =18a, v gs =0v 0.9 1.2 v reverse recovery time t rr see fig.3 i s =18a, v gs =0v, di/dt=100a/ s 60 ns reverse recovery charge q rr 114 nc fig.1 avalanche resistance test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit 50 50 v dd l 10v 0v BMS4003 g s d p. g 50 g s d i d =9a r l =6.7 v dd =60v v out BMS4003 v in pw=10 s d.c. 1% 10v 0v v in v dd BMS4003 l driver mosfet g s d
BMS4003 no. a1923-3/5 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it16318 it16319 it16320 it16321 --50 --25 0 25 50 75 100 125 150 0 0 36 32 20 28 0.5 3.0 2.5 1.5 1.0 2.0 16 8 24 12 4 0 36 32 28 20 12 24 16 4 8 010 4 268 3 19 57 15v 10v 0 160 120 80 40 140 100 60 20 tc=25 c v ds =10v v gs =6v it16323 0 0.2 0.4 0.6 0.8 1.2 1.0 0.01 0.1 10 100 7 5 3 2 7 5 3 2 7 5 3 2 2 1.0 7 5 3 it16322 25 c --25 c tc=75 c 0.1 1.0 23 57 23 57 7 10 100 23 5 10 100 1.0 0.1 2 5 7 2 3 5 7 3 2 5 3 7 v ds =10v tc= --25 c 75 c tc=75 c 25 c 024 0 160 140 100 60 120 80 40 20 12 8 61014 tc=75 c 25 c --25 c v gs =10v, i d =9a 25 c 8v single pulse it16324 10 1.0 100 1000 3 2 2 5 7 3 2 5 7 3 7 5 0.1 1.0 100 23 57 23 57 10 23 57 v dd =60v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 30 10 520 15 25 it16325 f=1mhz ciss coss crss --25 c i d =9a single pulse v gs =0v single pulse
BMS4003 no. a1923-4/5 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w p d -- tc a s o drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c case temperature, tc -- c allowable power dissipation, p d -- w it16328 it16327 0 0 20 40 60 80 100 120 140 100 80 60 20 40 120 160 it16330 it16329 it16326 0 0 1 2 3 4 5 6 7 8 12 10 9 8 24 10 6 0 0 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 140 120 5 10 25 20 30 15 160 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 0.1 10 s 100ms 10ms 1ms dc operation 1.0 10 100 23 57 23 57 23 57 10 100 3 5 7 2 3 5 7 operation in this area is limited by r ds (on). i dp =72a (pw 10 s) i d =18a 100 s v ds =60v i d =18a tc=25 c single pulse
BMS4003 no. a1923-5/5 ps this catalog provides information as of february, 2011. speci cations and information herein are subject to change without notice. note on usage : since the BMS4003 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
